CBRAM®技术

突破电阻RAM（RERAM）技术

Speed and power consumption matter, especially in modern edge computing and AI applications that make up the Internet of Things (IoT). Standard, off the-shelf memory products can’t satisfy these requirements. What’s needed is a breakthrough memory technology that can meet the requirements of the billions of battery-operated devices communicating on the edge of the Internet.

自2007年以来，对话（通过其收购Adesto）已经领导了开发电阻RAM技术的方式，我们在该行业中被认可为我们的强大专利组合。我们已经将导电桥柱（CBRAM）电阻存储器技术从原子从原子转移到产品。雷电竞官网登录我们的专业知识包括对生产电阻记忆所需的物理，材料和设计的基本理解，以及与生态系统的丰富经验;从原材料到成品制造。

Why ReRAM?

Resistive RAM, in particular Dialog's CBRAM, offers significant advantages over other non-volatile memory technologies:

Speed and power
Ideal for embedded NVM
在记忆计算中
耐受恶劣环境

Performance for Demanding Applications

A notable advantage of CBRAM is that the write operation in its bit-cells is very fast (<1us) compared to standard flash memory technologies (~1ms), and it also does not require a bit to be pre-erased. This makes write operations on CBRAM products 20 times faster than standard flash, while consuming 10 to 100 times less energy.

显着延长电池寿命

对话框的CBRAM技术是一种突破性的非易失性的RERAN记忆技术。它消耗的能量明显不如当今领先的回忆，而不会牺牲性能或可靠性。与竞争解决方案相比，这种离散的非易失性存储器（NVM）技术可以在读/写操作中实现50-100倍的功率。

使用CBRAM，设计人员可以通过能量收集来延长其系统的电池寿命和/或使用较小的电池，甚至是无电池操作的设计系统。由于CBRAM可以承受医疗灭菌过程，因此它也是智能医疗设备的理想选择。

MONETA VS FRAM：读取 - 断电 - 写入比较

MONETA VS EEPROM：读取 - 电源下降 - 写入比较

A Look Inside CBRAM

通过在标准CMOS互连金属层之间应用Fab友好的专利金属化和介电叠层来创建对话的CBRAM存储器。结果是一种卓越的NVM技术，易于嵌入标准逻辑流。

CBRAM technology relies on the electrochemical making and breaking of a conductive link. This process changes the resistance of the CBRAM storage element which is used to represent data. The conductive link is robust and can withstand high thermal stresses.

对话框的电阻内存架构的视图。数据存储为鲁棒导电桥与传统浮动门上的收费

CBRAM产品的横截面展示了标准CMOS过程中的易于集成。

CBRAM的工作原理;数据存储为由电压和电流创建的鲁棒导电链路。

CBRAM用于众多应用的苛刻环境和条件。雷竞技安卓下载与其他非易失性存储器技术不同，CBRAM提供强大的解决方案，非常适合恶劣环境。

Tolerant to Harsh Environments
Test	Condition	结果
伽玛	200kGy (20M rad)	Passed
电子梁	200kGy (20M rad)	Passed
Heavy Ion	75 MeV·cm²/mg	Passed
High Temp (SMT)	10min @260ºC.	Passed
磁场	〜10³Gauss	Passed
UV光	30min @ 12mW/cm²	Passed

Dialog's Licensing Program of CBRAM Technology

对话（通过其收购Adesto）是对电阻记忆商业化的公认领导者以及与半导体行业的SoC合作伙伴造成锻炼许可协议。寻找低功耗嵌入式NVM解决方案的铸造件，IDMS或Fabless公司应直接与我们联系以探索合作机会。

Shanghai Huali Microelectronics Corporation (HLMC) Announces Collaboration with Adesto and CNE

DB Hitek许可证Adesto的CBRAM®技术，用于IOT应用程序雷竞技安卓下载

Dialog's ReRAM in Production

We were the first company to successfully commercialize a ReRAM technology. Commercial products taking advantage of Dialog's proven CBRAM ReRAM technology are in production today. From medical devices to satellites, CBRAM benefits include the ability to survive in harsh environments. Consumer and energy harvesting applications are taking advantage of CBRAM’s power and performance.

EEPROM I2C / SPI内存产品雷电竞官网登录